1 copyright ? 2010, everlight americas inc. all rights reserved. release date : 02.02 .201 6 . issue no: dir - 0001563 www.everlight americas .com high power infrared led EAIST3045A1 features ? s mall package with high efficiency ? peak wavelength p = 85 0 nm ? soldering methods :smt ? thermal resistance (junction to lead): 18 /w . ? pb free ? the product itself will remain within rohs compliant version. description ? EAIST3045A1 series is an infrared emitting diode in miniature smd package which is molded in a water clear silicone with spherical top view lens. ? the device is spectrally matched with silicon photodiode, phototransistor. applications ? c cd camera ? infrared applied system
datasheet high power infrared led EAIST3045A1 2 copyright ? 2010, everlight americas inc. all rights reserved. release date : 0 2 . 02 .2016 . issue no: dir - 0001563 www .everlight americas .com device selection guide chip materials emitted color resin color algaas in frared water clear absolute maximum ratings (ta=25 ) parameter symbol rating unit continuous forward current i f 500 ma peak forward current *1 ifp 1.0 a reverse voltage vr 5 v operating temperature topr - 40~ + 85 storage temperature tstg - 40 ~ +100 junction temperature tj 115 oc thermal resistance (junction to leadframe) rth(j - l) 18 /w power dissipation @if= 5 00ma pd 1 w notes: *1:i fp conditions -- pulse width Q 100s and duty Q 1%. *2note: we suggest that customer should add the heat sink with EAIST3045A1 to excl ude the hea t .
datasheet high power infrared led EAIST3045A1 3 copyright ? 2010, everlight americas inc. all rights reserved. release date : 0 2 . 02 .2016 . issue no: dir - 0001563 www .everlight americas .com electro - optical characteristics (ta=25 ) parameter symbol min. typ. max. unit condition total radiated power po 150 210 -- mw i f = 35 0ma 200 270 -- i f = 50 0ma 400 500 -- i f = 100 0ma radiant intensity i e -- 65 -- mwsr i f = 50 0ma peak wavelength p -- 850 -- nm i f = 500 ma spectral bandwidth ? -- 40 -- nm i f = 50 0ma forward voltage v f 1.4 2.0 -- v i f = 35 0ma 1.6 2.2 -- i f = 50 0ma reverse current i r -- -- 10 a v r =5v view angle 21/2 -- 130 -- deg i f =20ma bin code list condition i f =350ma unit mw radiated power bin number a b c d e min 120 170 218 264 305 max 190 242 295 345 385 including test tolerance 10%
datasheet high power infrared led EAIST3045A1 4 copyright ? 2010, everlight americas inc. all rights reserved. release date : 0 2 . 02 .2016 . issue no: dir - 0001563 www .everlight americas .com typical electro - optical characteristics curves typical curve of spectral distribution relative intensity (%) p (nm) note: v()=standard eye response curve; i f =20ma typical polar radiation pattern for lambertian relative intensity (%) relative intensity r adiant intensity vs. forward current dominant wavelength vs. forward current (ta=25 ) ie - rad i ant intensity (mw ) forward current (ma) forward current (ma) ambient temperature( )
datasheet high power infrared led EAIST3045A1 5 copyright ? 2010, everlight americas inc. all rights reserved. release date : 0 2 . 02 .2016 . issue no: dir - 0001563 www .everlight americas .com package dimension note: 1. dimensions are in millimeters. 2. tolerances unless mentioned are 0.1mm. pad configuration pad function 1 anode 2 cathode p thermal pad
datasheet high power infrared led EAIST3045A1 6 copyright ? 2010, everlight americas inc. all rights reserved. release date : 0 2 . 02 .2016 . issue no: dir - 0001563 www .everlight americas .com reflow soldering characteristics for reflow process a. c16 ser ies are suitable for smt processes. b. curing of glue in oven must be according to standard operation flow processes. c. reflow soldering should not be done more than twice. d. in soldering process, stress on the leds during heating should be avoided. e. after soldering, do not bend the circuit board. package dimensions note: 1. dimensions are in millimeters 2. the tolerances unless mentioned is 0.1mm
datasheet high power infrared led EAIST3045A1 7 copyright ? 2010, everlight americas inc. all rights reserved. release date : 0 2 . 02 .2016 . issue no: dir - 0001563 www .everlight americas .com carrier tape dimensions: loaded quantity 20 00 pcs per reel. note: 1. dimensions are in millimeters 2. the tolerances unless mentioned is 0.1mm moisture resistant packaging a lu m in u m m o is tu e - p r o o f b a g l a b e l d e s ic c a n t l a b e l
datasheet high power infrared led EAIST3045A1 8 copyright ? 2010, everlight americas inc. all rights reserved. release date : 0 2 . 02 .2016 . issue no: dir - 0001563 www .everlight americas .com moisture resistant packing materials label form specification cpn: customers production number p/n : production number qty: packing quantity cat: ranks hue: peak wavelength ref: reference lot no: lot number made in taiwan: production place notes 1. above specificat ion may be changed without notice. everlight will reserve authority on material change for above specification. 2. when using this product, please observe the absolute maximum ratings and the instructions for using outlined in these specificat ion sheets. everlight assumes no responsibility for any damage resulting from use of the product which does not comply with the absolute 3. maximum ratings and the instructions included in these specification sheets. 4. these specification sheets include materi als protected under copyright of everlight corporation. please dont reproduce or cause a nyone to reproduce them without everlights consent.
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